Performance and Analysis of Ultra Deep Sub Micron Technology Using Complementary Metal Oxide Semiconductor Inverter

Bit Swapping Linear Feedback Shift Register For Low Power Application Using 130nm Complementary Metal Oxide Semiconductor Technology (TECHNICAL NOTE)

Bit swapping linear feedback shift register (BS-LFSR) is employed in a conventional linear feedback shirt register (LFSR) to reduce its power dissipation and enhance its performance. In this paper, an enhanced BS-LFSR for low power application is proposed. To achieve low power dissipation, the proposed BS-LFSR introduced the stacking technique to reduce leakage current. In addition, three diffe...

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) tech...

Simulation Study of Deep Sub-micron and Nanoscale Semiconductor Transistors

Active Electrostatic Discharge (ESD) Device for On-Chip ESD Protection in Sub-Quarter-Micron Complementary Metal-Oxide Semiconductor (CMOS) Process

A novel electrostatic discharge (ESD) protection device with a threshold voltage of 0V for complementary metal-oxide semiconductor (CMOS) integrated circuits in sub-quarter-micron CMOS technology is proposed. Quite different to the traditional ESD protection devices, such an active ESD device is originally standing in its turn-on state when the IC is zapped under ESD events. Therefore, such an ...

Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology

The dependence of the metal gate work function on the underlying gate dielectric in advanced metal-oxide-semiconductor ~MOS! gate stacks was explored. Metal work functions on high-k dielectrics are observed to differ appreciably from their values on SiO2 or in vacuum. We applied the interface dipole theory to the interface between the gate and the gate dielectric of a MOS transistor and obtaine...